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AM60N10-13D
Discrete Semiconductor Products

AM60N10-13D

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Analog Power Inc.

MOSFET P-CH 100V 51A TO-252

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AM60N10-13D
Discrete Semiconductor Products

AM60N10-13D

Active
Analog Power Inc.

MOSFET P-CH 100V 51A TO-252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAM60N10-13D
Current - Continuous Drain (Id) @ 25°C51 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]5.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC
Input Capacitance (Ciss) (Max) @ Vds18691 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1900$ 1.68

Description

General part information

AM60N10-13D

MOSFET P-CH 100V 51A TO-252

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