Discrete Semiconductor Products

1N5407-G

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DIODE GEN PURP 800V 3A DO27

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	1N5407-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-27
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Mounting Type	Speed [Min]	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology 1N5407-G	-65 C	125 °C	3 A	Through Hole	200 mA 500 ns	5 µA	Standard	DO-27	DO-201AD	1 V	DO-201AD Axial	800 V

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General part information

Diode 800 V 3A Through Hole DO-27 (DO-201AD)

Technical documentation and resources

No documents available