Discrete Semiconductor Products

SIHF18N50C-E3

Obsolete

MOSFET N-CH 500V 18A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 18A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF18N50C-E3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	76 nC, 76 nC
Input Capacitance (Ciss) (Max)	2942 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3, TO-220AB
Power Dissipation (Max)	38 W
Rds On (Max)	270 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Package Name	Technology	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	FET Type	Mounting Type	Vgs(th) (Max)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale SIHF18N50C-E3	TO-220-3 TO-220AB	MOSFET (Metal Oxide)	76 nC 76 nC	10 V	500 V	30 V	-55 °C	150 °C	270 mOhm	N-Channel	Through Hole	5 V	38 W	TO-220-3	18 A	2942 pF
Vishay Dale SIHF18N50D-E3	TO-220 Full Pack	MOSFET (Metal Oxide)	76 nC 76 nC	10 V	500 V	30 V	-55 °C	150 °C	280 mOhm	N-Channel	Through Hole	5 V	39 W	TO-220-3 Full Pack	18 A	1500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.23	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 18A (Tc) 38W (Tc) Through Hole TO-220-3

Technical documentation and resources