Discrete Semiconductor Products

SUA70090E-E3

Obsolete

MOSFET N-CH 100V 42.8A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 42.8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SUA70090E-E3

Current - Continuous Drain (Id) (Tc)	42.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Input Capacitance (Ciss) (Max)	1950 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	35.7 W
Rds On (Max)	9.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Package Name	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SUA70090E-E3	-55 °C	150 °C	N-Channel	1950 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	TO-220 Full Pack	9.3 mOhm	35.7 W	100 V	Through Hole	4 V	10 V	7.5 V	50 nC	20 V	42.8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.75	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 42.8A (Tc) 35.7W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources