Discrete Semiconductor Products

IRFSL7730PBF

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IRFSL7730 - 12V-300V N-CHANNEL P

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Discrete Semiconductor Products

Active

IRFSL7730 - 12V-300V N-CHANNEL P

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL7730PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	407 nC
Input Capacitance (Ciss) (Max) @ Vds	13660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
INFINEON IRFSL7730PBF	375 W	TO-262	20 V	407 nC	195 A	2.6 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	75 V	Through Hole	N-Channel	175 °C	-55 °C	6 V 10 V	MOSFET (Metal Oxide)	13660 pF	3.7 V
INFINEON IRFSL7730PBF	375 W	TO-262	20 V	407 nC	195 A	2.6 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	75 V	Through Hole	N-Channel	175 °C	-55 °C	6 V 10 V	MOSFET (Metal Oxide)	13660 pF	3.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly