HMC464-SX
ActiveWIDEBAND POWER AMPLIFIER CHIP, 2 - 20 GHZ
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HMC464-SX
ActiveWIDEBAND POWER AMPLIFIER CHIP, 2 - 20 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC464-SX |
|---|---|
| Current - Supply | 290 mA |
| Frequency [Max] | 20 GHz |
| Frequency [Min] | 2 GHz |
| Gain | 16 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 4 dB |
| P1dB | 26 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Voltage - Supply | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 588.63 | <4d |
| 4 | $ 568.45 | |||
| 6 | $ 557.20 | |||
| 10 | $ 543.57 | |||
| 14 | $ 534.93 | |||
Description
General part information
HMC464-Die Series
The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest InstrumentationFiber Optics
Documents
Technical documentation and resources