Integrated Circuits (ICs)
TC58BYG2S0HBAI6
ActiveKioxia America, Inc.
NAND FLASH 1.8V 4GB 24NM SLC NAND (EEPROM)
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Integrated Circuits (ICs)
TC58BYG2S0HBAI6
ActiveKioxia America, Inc.
NAND FLASH 1.8V 4GB 24NM SLC NAND (EEPROM)
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TC58BYG2S0HBAI6 |
|---|---|
| Access Time | 25 ns |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Memory Organization | 512 M |
| Memory Size | 512 kB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.7 V |
| Write Cycle Time - Word, Page | 25 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TC58BYG2 Series
FLASH - NAND (SLC) Memory IC 4Gbit Parallel 25 ns 67-VFBGA (6.5x8)
Documents
Technical documentation and resources
