Discrete Semiconductor Products

SI7636DP-T1-E3

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POWER MOSFET, N CHANNEL, 30 V, 28 A, 0.0033 OHM, SOIC, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 30 V, 28 A, 0.0033 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SI7636DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Technology	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI7636DP-T1-E3	N-Channel	30 V	17 A	4.5 V 10 V	PowerPAK® SO-8	20 V	MOSFET (Metal Oxide)	1.9 W	Surface Mount	3 V	50 nC	PowerPAK® SO-8	4 mOhm	5600 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources