Discrete Semiconductor Products

IPD040N03LGBTMA1

NRND

MOSFET N-CH 30V 90A TO252-31

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 90A TO252-31

Technical Specifications

Parameters and characteristics for this part

Specification	IPD040N03LGBTMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Mounting Type	Power Dissipation (Max)	Vgs (Max)
INFINEON IPD040N03LGATMA1	30 V	2.2 V	PG-TO252-3-11	4.5 V 10 V	3900 pF	90 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 mOhm	175 °C	-55 °C	38 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	79 W	20 V
INFINEON IPD040N03LGBTMA1	30 V	2.2 V	PG-TO252-3-11	4.5 V 10 V	3900 pF	90 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 mOhm	175 °C	-55 °C	38 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	79 W	20 V

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General part information

N-Channel 30 V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources