
Discrete Semiconductor Products
PBHV8515QAZ
ActiveNexperia USA Inc.
TRANS GP BJT NPN 150V 0.5A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R
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Discrete Semiconductor Products
PBHV8515QAZ
ActiveNexperia USA Inc.
TRANS GP BJT NPN 150V 0.5A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBHV8515QAZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 75 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Power - Max [Max] | 325 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN1010D-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 60 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBHV8515QA Series
NPN high-voltage low VCEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources