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Nexperia-PMXB75UPEZ MOSFETs Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Discrete Semiconductor Products

PBHV8515QAZ

Active
Nexperia USA Inc.

TRANS GP BJT NPN 150V 0.5A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

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Nexperia-PMXB75UPEZ MOSFETs Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Discrete Semiconductor Products

PBHV8515QAZ

Active
Nexperia USA Inc.

TRANS GP BJT NPN 150V 0.5A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8515QAZ
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition75 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Power - Max [Max]325 mW
QualificationAEC-Q101
Supplier Device PackageDFN1010D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic60 mV
Voltage - Collector Emitter Breakdown (Max) [Max]150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5000$ 0.14
DigikeyN/A 3562$ 0.83

Description

General part information

PBHV8515QA Series

NPN high-voltage low VCEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.