Discrete Semiconductor Products

VT1080S-M3/4W

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DIODE SCHOTTKY 80V 10A TO220-3

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 10A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VT1080S-M3/4W

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	600 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	810 mV

Part	Package / Case	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Grade	Qualification
Vishay General Semiconductor - Diodes Division VT1080S-M3/4W	TO-220-3	Through Hole	-55 °C	150 °C	Schottky	810 mV	600 µA	200 mA 500 ns	80 V	TO-220-3	10 A
Vishay General Semiconductor - Diodes Division VT1080C-E3/4W	TO-220-3	Through Hole	-55 °C	150 °C	Schottky		400 µA	200 mA 500 ns	80 V	TO-220AB		5 A	720 mV	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VT1080S-E3/4W	TO-220-3	Through Hole	-55 °C	150 °C	Schottky	810 mV	600 µA	200 mA 500 ns	80 V	TO-220-3	10 A
Vishay General Semiconductor - Diodes Division VT1080C-M3/4W	TO-220-3	Through Hole	-55 °C	150 °C	Schottky		400 µA	200 mA 500 ns	80 V	TO-220AB		5 A	720 mV	1 Pair Common Cathode	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 10A Through Hole TO-220-3

Technical documentation and resources