Discrete Semiconductor Products

GSIB620-E3/45

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BRIDGE RECT 1P 200V 2.8A GSIB-5S

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Discrete Semiconductor Products

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BRIDGE RECT 1P 200V 2.8A GSIB-5S

Technical Specifications

Parameters and characteristics for this part

Specification	GSIB620-E3/45

Current - Average Rectified (Io)	2.8 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GSIB-5S, 4-SIP
Supplier Device Package	GSIB-5S
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Reverse Leakage @ Vr	Technology	Diode Type	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division GSIB620-E3/45	-55 °C	150 °C	10 µA	Standard	Single Phase	200 V	2.8 A	GSIB-5S	4-SIP GSIB-5S	950 mV	Through Hole

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General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole GSIB-5S

Technical documentation and resources