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Discrete Semiconductor Products

IXFP14N85XM

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP/ TUBE

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DocumentsUR_QQQX2_E72873_20171208 Datasheet +1

Discrete Semiconductor Products

IXFP14N85XM

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP/ TUBE

Deep-Dive with AI

DocumentsUR_QQQX2_E72873_20171208 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP14N85XM

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	850 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1043 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFP14N85XM Series

DiscMSFT NCh UltrJnct XClass TO-220AB/FP

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXFP14N85XM	14 A	30 V	MOSFET (Metal Oxide)	550 mOhm	1043 pF	30 nC	N-Channel	5.5 V	38 W	850 V	10 V	Through Hole	TO-220	TO-220-3 Full Pack	-55 °C	150 °C
Littelfuse/Commercial Vehicle Products IXFP14N60P	14 A	30 V	MOSFET (Metal Oxide)	550 mOhm	2500 pF	36 nC	N-Channel	5.5 V		600 V	10 V	Through Hole	TO-220-3	TO-220-3	-55 °C	150 °C	300 W
Littelfuse/Commercial Vehicle Products IXFP14N85X	14 A	30 V	MOSFET (Metal Oxide)	550 mOhm	1043 pF	30 nC	N-Channel	5.5 V	460 W	850 V	10 V	Through Hole	TO-220AB (IXFP)	TO-220-3	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.19
		50	$ 4.94
		100	$ 4.42
		500	$ 3.90
		1000	$ 3.51
		2000	$ 3.29
Newark	Each	100	$ 4.59
		500	$ 4.18
		1000	$ 3.69
		2500	$ 3.43

Description

General part information

IXFP14N85XM Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

UR_QQQX2_E72873_20171208

Document

Datasheet

Product Change Notice EN

Datasheet