TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Discrete Semiconductor Products

MPSH10_D74Z

Obsolete

ON Semiconductor

RF TRANS NPN 25V 650MHZ TO92-3

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Discrete Semiconductor Products

MPSH10_D74Z

Obsolete

ON Semiconductor

RF TRANS NPN 25V 650MHZ TO92-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MPSH10_D74Z

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	650 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

MPSH10 Series

NPN Bipolar Small Signal Transistor

Part	Power - Max [Max]	Package / Case	Transistor Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type	Frequency - Transition
ON Semiconductor MPSH10_D26Z	350 mW	TO-226-3 TO-92-3	NPN	50 mA	25 V	-55 °C	150 °C	60	TO-92-3	Through Hole	650 MHz
ON Semiconductor MPSH10_D74Z	350 mW	TO-226-3 TO-92-3	NPN	50 mA	25 V	-55 °C	150 °C	60	TO-92-3	Through Hole	650 MHz
ON Semiconductor MPSH10	350 mW		NPN		25 V	-65 °C	150 °C	60		Through Hole	650 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MPSH10 Series

This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the TO-92 package. This device is ideal for low-power applications.

Documents

Technical documentation and resources