Discrete Semiconductor Products

IRG4PF50WPBF

Obsolete

IGBT 900V 51A TO-247AC

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Discrete Semiconductor Products

Obsolete

IGBT 900V 51A TO-247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRG4PF50WPBF

Current - Collector (Ic) (Max) [Max]	51 A
Current - Collector Pulsed (Icm)	204 A
Gate Charge	160 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	200 W
Supplier Device Package	TO-247AC
Switching Energy	190 µJ, 1.06 mJ
Td (on/off) @ 25°C	29 ns, 110 ns
Test Condition	5 Ohm, 28 A, 720 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	900 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C	Package / Case	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)
INFINEON IRG4PF50WPBF	200 W	900 V	150 °C	-55 °C	51 A	TO-247AC	1.06 mJ 190 µJ	29 ns 110 ns	TO-247-3	Through Hole	2.7 V	5 Ohm 15 V 28 A 720 V	160 nC	204 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 900 V 51 A 200 W Through Hole TO-247AC

Technical documentation and resources