Discrete Semiconductor Products

IRF7757TRPBF

Obsolete

MOSFET 2N-CH 20V 4.8A 8TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 4.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7757TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.173 in
Package / Case	8-TSSOP
Package / Case	4.4 mm
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Mounting Type	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Package / Case	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
INFINEON IRF7757TRPBF	1.2 V	1.2 W	150 °C	-55 °C	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	35 mOhm	0.173 in	8-TSSOP	4.4 mm	MOSFET (Metal Oxide)	4.8 A	23 nC	8-TSSOP	1340 pF	20 V
INFINEON IRF7757TR	1.2 V	1.2 W	150 °C	-55 °C	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	35 mOhm	0.173 in	8-TSSOP	4.4 mm	MOSFET (Metal Oxide)	4.8 A	23 nC	8-TSSOP	1340 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.53