Discrete Semiconductor Products

SQJQ402E-T1_GE3

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MOSFET N-CH 40V 200A PPAK 8 X 8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 200A PPAK 8 X 8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJQ402E-T1_GE3

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 8 x 8
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	1.7 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Qualification	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SQJQ402E-T1_GE3	Surface Mount	N-Channel	2.5 V	200 A	1.7 mOhm	260 nC	4.5 V 10 V	MOSFET (Metal Oxide)	PowerPAK® 8 x 8	PowerPAK® 8 x 8	20 V	13500 pF	-55 °C	175 ░C	Automotive	40 V	AEC-Q101	150 W

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General part information

N-Channel 40 V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources