Discrete Semiconductor Products

FDP039N08B-F102

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FET 80V 3.9 MOHM TO220/ TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

FET 80V 3.9 MOHM TO220/ TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	FDP039N08B-F102

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	133 nC
Input Capacitance (Ciss) (Max) @ Vds	9450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor FDP039N08B-F102	N-Channel	80 V	Through Hole	4.5 V	214 W	3.9 mOhm	10 V	-55 °C	175 ░C	133 nC	MOSFET (Metal Oxide)	TO-220-3	TO-220-3	9450 pF	120 A	20 V

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General part information

N-Channel 80 V 120A (Tc) 214W (Tc) Through Hole TO-220-3

Technical documentation and resources