Discrete Semiconductor Products

IPD200N15N3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DPAK TO-252 PACKAGE; 20 MOHM;

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Discrete Semiconductor Products

IPD200N15N3GATMA1

Active

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DPAK TO-252 PACKAGE; 20 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD200N15N3GATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPD200 Series

Part	Technology	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs
INFINEON IPD200N15N3GATMA1	MOSFET (Metal Oxide)	20 V	PG-TO252-3	175 °C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	150 V	1820 pF	8 V 10 V	150 W	4 V	50 A	31 nC	Surface Mount	20 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.80
		10	$ 1.53
		100	$ 1.21
		500	$ 1.14
	Digi-Reel®	1	$ 1.80
		10	$ 1.53
		100	$ 1.21
		500	$ 1.14
	N/A	34183	$ 2.06
	Tape & Reel (TR)	2500	$ 0.93
Newark	Each (Supplied on Full Reel)	2500	$ 0.98

Description

General part information

IPD200 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources