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TOLLLEADLESS
Discrete Semiconductor Products

IPT014N08NM5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.4 MOHM;

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TOLLLEADLESS
Discrete Semiconductor Products

IPT014N08NM5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT014N08NM5ATMA1
Current - Continuous Drain (Id) @ 25°C331 A, 37 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]200 nC
Input Capacitance (Ciss) (Max) @ Vds14000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs1.4 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.88
10$ 4.65
100$ 3.38
500$ 2.90
Digi-Reel® 1$ 6.88
10$ 4.65
100$ 3.38
500$ 2.90
N/A 0$ 5.98
Tape & Reel (TR) 2000$ 2.90
NewarkEach (Supplied on Cut Tape) 1$ 6.24
10$ 4.73
25$ 4.40
50$ 3.92
100$ 3.44
250$ 3.20
500$ 2.96

Description

General part information

IP5014N Series

The IPT014N08NM5 is Infineon’s OptiMOS™ power MOSFET 1.4 mOhm, 80 V in aTO-Leadless (TOLL) packagewith a high current capability of 331 A (ID@25 ˚C). Infineon’sOptiMOS™ 5silicon technology of power MOSFETs is especially designed for synchronous rectification fortelecomandserver power supplies. Combined with theTOLL package, IPT014N08NM5 is optimized forbattery-powered applications, includingLV drives,drones, ande-bikes.

Documents

Technical documentation and resources