Discrete Semiconductor Products

DMG214010R

Unknown

TRANS PREBIAS 1PNP 1NPN MINI6

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Discrete Semiconductor Products

Unknown

TRANS PREBIAS 1PNP 1NPN MINI6

Technical Specifications

Parameters and characteristics for this part

Specification	DMG214010R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max)	100 µA, 500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	20, 210
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	4.7 kOhms
Supplier Device Package	Mini6-G4-B
Transistor Type	1 NPN, 1 PNP Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max)	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Mounting Type	Resistor - Emitter Base (R2)
Panasonic Electronic Components DMG214010R	100 mA	300 mW	20 210	1 NPN 1 PNP Pre-Biased	150 MHz	50 V	100 µA 500 nA	250 mV 300 mV	SOT-23-6	Mini6-G4-B	Surface Mount	4.7 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V 100mA 150MHz 300mW Surface Mount Mini6-G4-B

Technical documentation and resources

No documents available