Discrete Semiconductor Products

SICU0660P-TP

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DIODE SIL CARBIDE 650V 6A TO252

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 6A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SICU0660P-TP

Capacitance @ Vr, F	271 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252 (DPAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Reverse Recovery Time (trr)
Micro Commercial Components SICU0660P-TP	1.6 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	6 A	271 pF	30 µA	No Recovery Time	Surface Mount	TO-252 (DPAK)	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	0 ns
Micro Commercial Components SICU0660P-TP	1.6 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	6 A	271 pF	30 µA	No Recovery Time	Surface Mount	TO-252 (DPAK)	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 6A Surface Mount TO-252 (DPAK)

Technical documentation and resources