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Infineon Technologies AG-IRF1010EZPBF MOSFETs Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
Discrete Semiconductor Products

IRFB4410ZPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 97 A, 0.008 OHM, TO-220AB, THROUGH HOLE

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Infineon Technologies AG-IRF1010EZPBF MOSFETs Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
Discrete Semiconductor Products

IRFB4410ZPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 97 A, 0.008 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4410ZPBF
Current - Continuous Drain (Id) @ 25°C97 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds4820 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)230 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 2.00
10$ 0.94
100$ 0.92
500$ 0.82
1000$ 0.71
3000$ 0.65
DigikeyN/A 0$ 1.99
Tube 1$ 2.05
50$ 0.94
100$ 0.91
500$ 0.83
1000$ 0.76
2000$ 0.71
5000$ 0.69

Description

General part information

IRFB4410 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.