Discrete Semiconductor Products

IDP08E65D2XKSA1

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INFINEON

THE IDP08E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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Discrete Semiconductor Products

IDP08E65D2XKSA1

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INFINEON

THE IDP08E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDP08E65D2XKSA1

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	40 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

IDP08E65 Series

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Package / Case	Speed
INFINEON IDP08E65D1XKSA1	40 µA	80 ns	-40 °C	175 ░C	1.7 V	Standard	650 V	TO-220-2	Through Hole	8 A	TO-220-2	200 mA 500 ns
INFINEON IDP08E65D2XKSA1	40 µA	40 ns	-40 °C	175 ░C	2.3 V	Standard	650 V	TO-220-2	Through Hole	8 A	TO-220-2	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.66
		1271	$ 2.66
Mouser	N/A	1	$ 2.48
		10	$ 1.84
		100	$ 1.46
		500	$ 1.23
		1000	$ 1.05
		2500	$ 1.00
		5000	$ 0.97

Description

General part information

IDP08E65 Series

Rapid 2switching 650 V, 8 A emitter controlledpower silicon diodein a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.

Documents

Technical documentation and resources

No documents available