Discrete Semiconductor Products

IPI034NE7N3 G

Obsolete

MOSFET N-CH 75V 100A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 100A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI034NE7N3 G

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8130 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.8 V

Part	Vgs(th) (Max) @ Id	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type
INFINEON IPI034NE7N3 G	3.8 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	117 nC	3.4 mOhm	PG-TO262-3	8130 pF	175 °C	-55 °C	Through Hole	214 W	75 V	100 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 75 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available