Discrete Semiconductor Products

SQ2348ES-T1_BE3

Obsolete

MOSFET N-CH 30V 8A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2348ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	540 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	3 W
Qualification	AEC-Q101
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Qualification	Grade	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Technology	Package / Case	Current - Continuous Drain (Id) (Tc)	Rds On (Max)
Vishay Dale SQ2348ES-T1_BE3	14.5 nC	30 V	Surface Mount	-55 °C	175 °C	N-Channel	AEC-Q101	Automotive	20 V	3 W	2.5 V	540 pF	10 V	4.5 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	8 A	24 mOhm

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3D models and CAD resources for this part

General part information

N-Channel 30 V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources