Discrete Semiconductor Products

IPB096N03LGATMA1

Obsolete

MOSFET N-CH 30V 35A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 35A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB096N03LGATMA1

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	9.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Rds On (Max) @ Id, Vgs
INFINEON IPB096N03LGATMA1	15 nC	35 A	20 V	42 W	175 °C	-55 °C	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	2.2 V	30 V	1600 pF	MOSFET (Metal Oxide)	9.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 30 V 35A (Tc) 42W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources