Discrete Semiconductor Products

MCB130N10YA-TP

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N-CHANNEL MOSFET, D2-PAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCB130N10YA-TP

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	260 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCB130N10YA-TP	260 W	Surface Mount	4.6 mOhm	D2PAK	130 A	-55 °C	150 °C	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 V	20 V	66 nC	MOSFET (Metal Oxide)	4600 pF	10 V

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General part information

N-Channel 100 V 130A (Tc) 260W (Tc) Surface Mount D2PAK

Technical documentation and resources

No documents available