Discrete Semiconductor Products

VFT3080S-E3/4W

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DIODE SCHOTTKY 80V 30A TO220-3

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 30A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VFT3080S-E3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VFT3080S-E3/4W	TO-220-3	950 mV	TO-220-3	Through Hole	1 mA	30 A	200 mA 500 ns	-55 °C	150 °C	Schottky	80 V
Vishay General Semiconductor - Diodes Division VFT3080C-M3/4W	ITO-220AB		TO-220-3 Full Pack Isolated Tab	Through Hole	700 µA		200 mA 500 ns	-55 °C	150 °C	Schottky	80 V	15 A	1 Pair Common Cathode	820 mV
Vishay General Semiconductor - Diodes Division VFT3080S-M3/4W	TO-220-3	950 mV	TO-220-3	Through Hole	1 mA	30 A	200 mA 500 ns	-55 °C	150 °C	Schottky	80 V

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General part information

Diode 80 V 30A Through Hole TO-220-3

Technical documentation and resources