Specification	BUK9M60-100LX

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1023 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	50.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.05 V

BUK9M60-100L Series

N-channel 100 V, 60 mOhm logic level MOSFET in LFPAK33

Part	FET Type	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Grade	Supplier Device Package	Qualification	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. BUK9M60-100LX	N-Channel	50.4 W	175 °C	-55 °C	2.05 V	100 V	4.5 V 10 V	1023 pF	Surface Mount	19 A	20 V	18 nC	MOSFET (Metal Oxide)	Automotive	LFPAK33	AEC-Q101	60 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	220	$ 0.85

Description

General part information

BUK9M60-100L Series

Logic level N-channel MOSFET in a LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.