Specification	PMV120ENEAR

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	275 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	6.4 W, 513 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMV120 Series

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Grade	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Qualification	Package / Case
Nexperia USA Inc. PMV120ENEAR	TO-236AB	60 V	275 pF	MOSFET (Metal Oxide)	4.5 V 10 V	6.4 W 513 mW	Surface Mount	Automotive	123 mOhm	150 °C	-55 °C	20 V	7.4 nC	2.1 A	2.7 V	N-Channel	AEC-Q101	SC-59 SOT-23-3 TO-236-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 2.1A (Ta) 513mW (Ta), 6.4W (Tc) Surface Mount TO-236AB

Technical documentation and resources