IRFI4110GPBF
LTBIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 4.5 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IRFI4110GPBF
LTBIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 4.5 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFI4110GPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 72 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 290 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9540 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 61 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | TO-220AB Full-Pak |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFI4110 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources