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PBSS4032NT-QR
Discrete Semiconductor Products

PBSS4032NT-QR

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Nexperia USA Inc.

30 V, 2.6 A NPN LOW VCESAT TRANSISTOR

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PBSS4032NT-QR
Discrete Semiconductor Products

PBSS4032NT-QR

Active
Nexperia USA Inc.

30 V, 2.6 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4032NT-QR
Current - Collector (Ic) (Max) [Max]2.6 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]390 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.16

Description

General part information

PBSS4032NT-Q Series

NPN low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.