Discrete Semiconductor Products

BSZ900N15NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; PQFN 3.3 X 3.3 PACKAGE; 90 MOHM;

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Discrete Semiconductor Products

BSZ900N15NS3GATMA1

Active

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; PQFN 3.3 X 3.3 PACKAGE; 90 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ900N15NS3GATMA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

BSZ900 Series

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
INFINEON BSZ900N15NS3GATMA1	90 mOhm	Surface Mount	8-PowerTDFN	20 V	13 A	MOSFET (Metal Oxide)	PG-TSDSON-8	N-Channel	150 V	510 pF	38 W	150 °C	-55 °C	4 V	8 V 10 V	7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.89
		10	$ 1.21
		100	$ 0.81
		500	$ 0.64
		1000	$ 0.59
		2000	$ 0.54
	Digi-Reel®	1	$ 1.89
		10	$ 1.21
		100	$ 0.81
		500	$ 0.64
		1000	$ 0.59
		2000	$ 0.54
	N/A	11953	$ 1.20
	Tape & Reel (TR)	5000	$ 0.50
Newark	Each (Supplied on Full Reel)	5000	$ 0.49

Description

General part information

BSZ900 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources