Discrete Semiconductor Products

MUN2140T1G

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BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

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Discrete Semiconductor Products

Active

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

Specification	MUN2140T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	230 mW
Resistor - Base (R1)	47 kOhms
Supplier Device Package	SC-59
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Power - Max [Max]	Transistor Type
ON Semiconductor MUN2140T1G	50 V	SC-59	47 kOhms	100 mA	120	250 mV	500 nA	SC-59 SOT-23-3 TO-236-3	Surface Mount	230 mW	PNP - Pre-Biased

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59

Technical documentation and resources