Specification	SSM3J117TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	117 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

SSM3J117TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.117 Ω@10V, SOT-323F(UFM)

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3J117TU,LF	MOSFET (Metal Oxide)	Surface Mount	30 V	4 V	10 V	UFM	2 A	2.6 V	150 °C	280 pF	P-Channel	117 mOhm	20 V	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	270	$ 0.42

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.117 Ω@10V, SOT-323F(UFM)

Technical documentation and resources