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TO-220AB PKG
Discrete Semiconductor Products

IRF40B207

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INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 4.5 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRF40B207

Active
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 4.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF40B207
Current - Continuous Drain (Id) @ 25°C95 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2110 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs4.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1615$ 0.68
Tube 1$ 1.18
10$ 0.74
100$ 0.50
500$ 0.41
NewarkEach 1$ 1.43
10$ 0.90
100$ 0.78
500$ 0.68
1000$ 0.62
2500$ 0.58
12000$ 0.56

Description

General part information

IRF40B207 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Documents

Technical documentation and resources