Discrete Semiconductor Products

SSM3K15ACT,L3F

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-883(CST3)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-883(CST3)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K15ACT,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-883(CST3)

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
Toshiba Semiconductor and Storage SSM3K15ACT,L3F	SC-101 SOT-883	3.6 Ohm	4 V	2.5 V	100 mW	Surface Mount	N-Channel	1.5 V	MOSFET (Metal Oxide)	CST3	13.5 pF	30 V	20 V	100 mA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	28735	$ 0.27

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-883(CST3)

Technical documentation and resources