Discrete Semiconductor Products

IRF9358PBF

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IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 16.3 MOHM;

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Discrete Semiconductor Products

Unknown

IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 16.3 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9358PBF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	16.3 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Package / Case	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Power - Max [Max]	Technology	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs
INFINEON IRF9358PBF	8-SO	0.154 in	8-SOIC	3.9 mm	30 V	1740 pF	Surface Mount	2 W	MOSFET (Metal Oxide)	Logic Level Gate	38 nC	2 P-Channel (Dual)	9.2 A	2.4 V	150 °C	-55 °C	16.3 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00