EVAL1ED3124MX12HTOBO1
ActivePOWER MANAGEMENT IC DEVELOPMENT TOOLS 2300 V, 14 A, 5.7 KV (RMS) SINGLE-CHANNEL ISOLATED GATE DRIVER EVAL PLATFORM
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EVAL1ED3124MX12HTOBO1
ActivePOWER MANAGEMENT IC DEVELOPMENT TOOLS 2300 V, 14 A, 5.7 KV (RMS) SINGLE-CHANNEL ISOLATED GATE DRIVER EVAL PLATFORM
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Technical Specifications
Parameters and characteristics for this part
| Specification | EVAL1ED3124MX12HTOBO1 |
|---|---|
| Contents | Board(s) |
| Embedded | Yes, MCU |
| Function | Gate Driver |
| Primary Attributes | 25 A, 600 V |
| Primary Attributes | 1-Phase Bridge, Driver with IGBT Power Module |
| Supplied Contents | Board(s) |
| Type | Power Management |
| Utilized IC / Part | 1ED3124MU12H, 1ED3124MC12H |
Pricing
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Description
General part information
EVAL1ED3124 Series
The EVAL-1ED3124MX12H is in half-bridge configuration with two gate driver ICs (1ED3124MU12H) to drive power switches such asIGBTsandSiC MOSFETs. An additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side. Fast operational amplifier is used as comparator for over-current detection. This board is best suited for double-pulse testing. 1ED3124MU12H belongs to theEiceDRIVER™ Compact1ED31xx family (X3 compact family). 1ED3124 offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
Documents
Technical documentation and resources