Discrete Semiconductor Products

SPI10N10

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MOSFET N-CH 100V 10.3A TO262-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 100V 10.3A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPI10N10

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC
Input Capacitance (Ciss) (Max) @ Vds	426 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	170 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
INFINEON SPI10N10	175 °C	-55 °C	I2PAK TO-262-3 Long Leads TO-262AA	20 V	4 V	10.3 A	N-Channel	MOSFET (Metal Oxide)	Through Hole	426 pF	10 V	50 W	170 mOhm	100 V	19.4 nC

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General part information

N-Channel 100 V 10.3A (Tc) 50W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources