Specification	LTC1155IS8#PBF

Channel Type	Independent
Driven Configuration	High-Side
Gate Type	MOSFET (N-Channel)
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Supplier Device Package	8-SO
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	4.5 V

LTC1155 Series

Dual High Side Micropower MOSFET Driver

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type	Number of Drivers	Logic Voltage - VIL, VIH	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Input Type	Channel Type	Package / Case	Driven Configuration	Package / Case	Package / Case
Analog Devices Inc./Maxim Integrated LTC1155CN8#PBF	8-PDIP	0 °C	70 °C	MOSFET (N-Channel)	2	0.8 V 2 V	18 V	4.5 V	Through Hole	Non-Inverting	Independent	8-DIP (0.300" 7.62mm)	High-Side
Analog Devices Inc./Maxim Integrated LTC1155CS8#TR	8-SO	0 °C	70 °C	MOSFET (N-Channel) N-Channel MOSFET	2	0.8 V 2 V	18 V	4.5 V	Surface Mount	Non-Inverting	Independent	8-SOIC	High-Side	0.154 in	3.9 mm
Analog Devices Inc./Maxim Integrated LTC1155IS8#TRPBF	8-SO	-40 ¯C	85 C	MOSFET (N-Channel)	2	0.8 V 2 V	18 V	4.5 V	Surface Mount	Non-Inverting	Independent	8-SOIC	High-Side	0.154 in	3.9 mm
Analog Devices Inc./Maxim Integrated LTC1155CS8#PBF	8-SO	0 °C	70 °C	MOSFET (N-Channel) N-Channel MOSFET	2	0.8 V 2 V	18 V	4.5 V	Surface Mount	Non-Inverting	Independent	8-SOIC	High-Side	0.154 in	3.9 mm
Analog Devices Inc./Maxim Integrated LTC1155IN8#PBF	8-PDIP	-40 ¯C	85 C	MOSFET (N-Channel)	2	0.8 V 2 V	18 V	4.5 V	Through Hole	Non-Inverting	Independent	8-DIP (0.300" 7.62mm)	High-Side
Analog Devices Inc./Maxim Integrated LTC1155IS8#PBF	8-SO	-40 ¯C	85 C	MOSFET (N-Channel)	2	0.8 V 2 V	18 V	4.5 V	Surface Mount	Non-Inverting	Independent	8-SOIC	High-Side	0.154 in	3.9 mm
Analog Devices Inc./Maxim Integrated LTC1155CS8#TRPBF	8-SO	0 °C	70 °C	MOSFET (N-Channel)	2	0.8 V 2 V	18 V	4.5 V	Surface Mount	Non-Inverting	Independent	8-SOIC	High-Side	0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Arrow	N/A	1	$ 2.43	1m+
Digikey	N/A	660	$ 11.43	1m+

Description

General part information

LTC1155 Series

The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower "sleep" operation is required.The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.APPLICATIONSLaptop Power Bus SwitchingSCSI Termination Power SwitchingCellular Phone Power ManagementP-Channel Switch ReplacementRelay and Solenoid DriversLow Frequency Half H-BridgeMotor Speed and Torque Control

Documents

Technical documentation and resources

LTC1155IS8#PBF | Datasheet

Datasheet

R294 Reliability Data

Reliability Data