Discrete Semiconductor Products

MCP130N10YB-BP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MCP130N10YB-BP

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Supplier Device Package	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id
MCC (Micro Commercial Components) MCP130N10YB-BP	-55 C	150 °C	310 W	Through Hole	4450 pF	20 V	TO-220AB	N-Channel	MOSFET (Metal Oxide)	130 A	68 nC	5.5 mOhm	4.5 V 10 V	100 V	TO-220-3	2.5 V
MCC (Micro Commercial Components) MCP130N10YB-BP	-55 C	150 °C	310 W	Through Hole	4450 pF	20 V	TO-220AB	N-Channel	MOSFET (Metal Oxide)	130 A	68 nC	5.5 mOhm	4.5 V 10 V	100 V	TO-220-3	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 130A (Tc) 310W Through Hole TO-220AB

Technical documentation and resources