Discrete Semiconductor Products

BAS19-E3-18

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DIODE GP 100V 200MA SOT23-3

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Discrete Semiconductor Products

Active

DIODE GP 100V 200MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS19-E3-18

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Mounting Type	Speed	Speed	Package / Case
Vishay General Semiconductor - Diodes Division BAS19-G3-18	50 ns	100 V	100 nA	1.25 V	200 mA	Standard	SOT-23-3	150 °C	-55 °C	5 pF	Surface Mount	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3
Vishay General Semiconductor - Diodes Division BAS19-E3-18	50 ns	100 V	100 nA	1.25 V	200 mA	Standard	SOT-23-3	150 °C	-55 °C	5 pF	Surface Mount	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3
Vishay General Semiconductor - Diodes Division BAS19-E3-08	50 ns	100 V	100 nA	1.25 V	200 mA	Standard	SOT-23-3	150 °C	-55 °C	5 pF	Surface Mount	Any Speed	200 mA	SC-59 SOT-23-3 TO-236-3

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General part information

Diode 100 V 200mA Surface Mount SOT-23-3

Technical documentation and resources

No documents available