HMC-ABH241-SX
ActiveMEDIUM POWER AMPLIFIER CHIP, 50 - 66 GHZ
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HMC-ABH241-SX
ActiveMEDIUM POWER AMPLIFIER CHIP, 50 - 66 GHZ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC-ABH241-SX |
|---|---|
| Current - Supply | 220 mA |
| Frequency [Max] | 66 GHz |
| Frequency [Min] | 50 GHz |
| Gain | 24 dB |
| Mounting Type | Surface Mount |
| P1dB | 17 dBm |
| Package / Case | Die |
| RF Type | 802.11/WiFi, WLAN |
| Supplier Device Package | Die |
| Test Frequency [Max] | 66 GHz |
| Test Frequency [Min] | 50 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 377.32 | <2d |
| 4 | $ 364.03 | |||
| 6 | $ 356.62 | |||
| 10 | $ 347.66 | |||
| 14 | $ 341.97 | |||
| 20 | $ 336.12 | |||
Description
General part information
HMC-ABH241-DIE Series
The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsShort Haul / High Capacity LinksWireless LAN BridgesMilitary & Space
Documents
Technical documentation and resources