Discrete Semiconductor Products

FQU2N90TU

Obsolete

MOSFET N-CH 900V 1.7A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 900V 1.7A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQU2N90TU

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	50 W, 2.5 W
Rds On (Max) @ Id, Vgs	7.2 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type
ON Semiconductor FQU2N90TU	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	500 pF	N-Channel	-55 °C	150 °C	10 V	7.2 Ohm	2.5 W 50 W	30 V	900 V	5 V	1.7 A	IPAK	Through Hole
ON Semiconductor FQU2N90TU	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	500 pF	N-Channel	-55 °C	150 °C	10 V	7.2 Ohm	2.5 W 50 W	30 V	900 V	5 V	1.7 A	IPAK	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK

Technical documentation and resources

No documents available