Discrete Semiconductor Products

IPI126N10N3 G

Obsolete

MOSFET N-CH 100V 58A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 58A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI126N10N3 G

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	12.6 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	FET Type	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type
INFINEON IPI126N10N3 G	N-Channel	3.5 V	2500 pF	100 V	175 °C	-55 °C	MOSFET (Metal Oxide)	20 V	12.6 mOhm	35 nC	94 W	6 V 10 V	PG-TO262-3	58 A	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO262-3

Technical documentation and resources