Specification	SSM3J15FV,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.1 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

SSM3J15FV Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-723(VESM)

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
Toshiba Semiconductor and Storage SSM3J15FV,L3F	30 V	4 V	2.5 V	1.7 V	9.1 pF	Surface Mount	20 V	150 mW	P-Channel	100 mA	MOSFET (Metal Oxide)	SOT-723	12 Ohm	150 °C	-55 °C	VESM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	30211	$ 0.15

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-723(VESM)

Technical documentation and resources