
Discrete Semiconductor Products
PMBT2907A-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 600 MA PNP SWITCHING TRANSISTOR
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Search across all available documentation for this part.

Discrete Semiconductor Products
PMBT2907A-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 600 MA PNP SWITCHING TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMBT2907A-QR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 10 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 hFE |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMBT2907A-Q Series
PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources