Discrete Semiconductor Products

SPA11N65C3XKSA1

NRND

COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 380 MOHM;

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Discrete Semiconductor Products

NRND

COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 380 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	SPA11N65C3XKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	33 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON SPA11N65C3XKSA1	650 V	20 V	380 mOhm	60 nC	10 V	1200 pF	N-Channel	MOSFET (Metal Oxide)	3.9 V	11 A	TO-220-3 Full Pack	Through Hole	33 W	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The SPA11N65C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for PC Power and adapter applications.

Technical documentation and resources